Title :
Laterally scaled down tiered-edge ohmic structure of InP-based HEMTs for 2-S/mmg/sub m/ and 500-GHz f/sub T/
Author :
Matsuzaki, Hideaki ; Maruyama, Takashi ; Kosugi, Toshihiko ; Takahashi, Hiroyuki ; Tokumitsu, Masami ; Enoki, Takatomo
Author_Institution :
NTT Photonics Labs., NTT Corp., Atsugi
Abstract :
DC and RF characteristics of InP-based HEMTs were improved by employing a laterally scaled down ohmic structure and an InGaAs/InAs composite channel. Through the combination of our process technology for fabricating this structure and that for scaling down a gate length, we successfully fabricated a 50-nm-gate HEMT exhibiting extrinsic transconductance of 2.0 S/mm and extrinsic current gain cutoff frequency (fT) of 496 GHz simultaneously. This is the first report of a transistor exhibiting 500-GHz fT with large current-drivability
Keywords :
III-V semiconductors; gallium arsenide; high electron mobility transistors; indium compounds; ohmic contacts; 496 GHz; 50 nm; 500 GHz; HEMT; InGaAs-InAs; InP; composite channel; high electron mobility transistors; laterally scaled down ohmic structure; Cutoff frequency; Fabrication; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; MODFETs; Noise figure; Radio frequency; Transconductance;
Conference_Titel :
Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-9268-X
DOI :
10.1109/IEDM.2005.1609469
