Laterally scaled down tiered-edge ohmic structure of InP-based HEMTs for 2-S/mmg/sub m/ and 500-GHz f/sub T/

Author

Matsuzaki, Hideaki ; Maruyama, Takashi ; Kosugi, Toshihiko ; Takahashi, Hiroyuki ; Tokumitsu, Masami ; Enoki, Takatomo

Author_Institution

NTT Photonics Labs., NTT Corp., Atsugi

fYear

2005

fDate

5-5 Dec. 2005

Firstpage

775

Lastpage

778

Abstract

DC and RF characteristics of InP-based HEMTs were improved by employing a laterally scaled down ohmic structure and an InGaAs/InAs composite channel. Through the combination of our process technology for fabricating this structure and that for scaling down a gate length, we successfully fabricated a 50-nm-gate HEMT exhibiting extrinsic transconductance of 2.0 S/mm and extrinsic current gain cutoff frequency (f_T) of 496 GHz simultaneously. This is the first report of a transistor exhibiting 500-GHz f_T with large current-drivability

Keywords

III-V semiconductors; gallium arsenide; high electron mobility transistors; indium compounds; ohmic contacts; 496 GHz; 50 nm; 500 GHz; HEMT; InGaAs-InAs; InP; composite channel; high electron mobility transistors; laterally scaled down ohmic structure; Cutoff frequency; Fabrication; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; MODFETs; Noise figure; Radio frequency; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International

Conference_Location

Washington, DC

Print_ISBN

0-7803-9268-X

Type

conf

DOI

10.1109/IEDM.2005.1609469

Filename

1609469