DocumentCode :
3444803
Title :
Fabrication, characterization and modeling of thin silicon tandem cell on foil in four terminal configuration
Author :
Kolodziej, Andrze J. ; Krewniak, Pawel ; Baranowski, Witold ; Kolodziej, Tomasz
Author_Institution :
AGH Univ. of Sci. & Technol., Cracow, Poland
fYear :
2009
fDate :
7-12 June 2009
Abstract :
The investigation samples of amorphous/microcrystalline silicon and silicon-germanium cells were made at low and high pressure as well as in graded H2, SiH4, GeH4 flows and various plasma power conditions by RF PECVD on a glass and also on a foil and were analyzed in four terminal configuration. The authors focused on fabrication of protocrystalline and microcrystalline Si and SiGe solar cells with 6%-8% efficiency, and on projecting of thicknesses of component cells as well as designing of a role of the back reflector to obtain the current and absorbed light matching in the configuration. The analyses of light transmissions and reflections, I-V-C light and dark characteristics as well as two light beam quantum efficiency measurements for the components were conducted.
Keywords :
Ge-Si alloys; amorphous semiconductors; elemental semiconductors; hydrogen; plasma CVD coatings; semiconductor growth; silicon; solar cells; RF PECVD; Si-Ge; Si:H; absorbed light matching; amorphous silicon cell; back reflector; dark characteristics; foil; four-terminal configuration; glass substrate; light beam quantum efficiency; light reflections; light transmissions; microcrystalline silicon cell; plasma power; protocrystalline solar cells; silicon-germanium cell; thin silicon tandem cell; Coatings; Fabrication; III-V semiconductor materials; Optical reflection; Optical refraction; Optical surface waves; Photovoltaic cells; Ray tracing; Silicon; Solar energy;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE
Conference_Location :
Philadelphia, PA
ISSN :
0160-8371
Print_ISBN :
978-1-4244-2949-3
Electronic_ISBN :
0160-8371
Type :
conf
DOI :
10.1109/PVSC.2009.5411449
Filename :
5411449
Link To Document :
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