• DocumentCode
    3444870
  • Title

    A high-performance and low-noise CMOS image sensor with an expanding photodiode under the isolation oxide

  • Author

    Itonaga, Kazuichiroh ; Abe, Hideshi ; Yoshihara, Ikuo ; Hirayama, Teruo

  • Author_Institution
    Dept. of Imager Process, Sony Corp., Kanagawa
  • fYear
    2005
  • fDate
    5-5 Dec. 2005
  • Lastpage
    794
  • Abstract
    We´ve realized a 2.5-mum square pixel with high saturation electron capacity and sensitivity, which realizes the low dark current as well as triple Qs value of the conventional STI, by expanding the buried photodiode under the isolation oxide, and the sensitivity gain will be 20% higher using the Cu process than is possible with the Al process
  • Keywords
    CMOS image sensors; photodiodes; 2.5 micron; CMOS image sensor; dark current; electron capacity; electron sensitivity; isolation oxide; photodiode; Boron; CMOS image sensors; CMOS technology; Electrons; Ion implantation; Isolation technology; Logic; Photodiodes; Semiconductor films; Space technology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International
  • Conference_Location
    Washington, DC
  • Print_ISBN
    0-7803-9268-X
  • Type

    conf

  • DOI
    10.1109/IEDM.2005.1609474
  • Filename
    1609474
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3444870