Title :
High-speed blue-, red-, and infrared-sensitive photodiode integrated in a 0.35 /spl mu/m SiGe:C-BiCMOS process
Author :
Meinhardt, Gerald ; Kraft, Jochen ; Löffler, Bernhard ; Enichlmair, Hubert ; Röhrer, Georg ; Wachmann, Ewald ; Schrems, Martin ; Swoboda, Robert ; Seidl, Christoph ; Zimmermann, Horst
Author_Institution :
Austriamicrosyst., Unterpremstatten
Abstract :
A monolithically integrated photodiode with SiGe:C anode, which exhibits an excellent spectral responsivity of typically 0.21/0.42/0.53 A/W at 410/660/785nm and sub-ns rise/fall times, fabricated without process modification is presented. The bandwidth of the photodiode exceeds 1300/490/260MHz at 410/660/785nm favoring this device for universal optical storage applications. By applying a reverse bias voltage up to 10 V the photodiode features responsivities up to 0.6 A/W for 410nm due to avalanche multiplication
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; carbon; high-speed optical techniques; photodiodes; 0.35 micron; 1300 MHz; 260 MHz; 410 nm; 490 MHz; 660 nm; 785 nm; BiCMOS process; SiGe:C; avalanche multiplication; blue-sensitive photodiode; infrared-sensitive photodiode; monolithically integrated photodiode; red-sensitive photodiode; spectral responsivity; universal optical storage applications; Absorption; Anodes; Doping profiles; Heterojunction bipolar transistors; High speed optical techniques; Optical devices; Optical sensors; Photodiodes; Silicon; Thyristors;
Conference_Titel :
Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-9268-X
DOI :
10.1109/IEDM.2005.1609477
