Dramatic improvement of V/sub fb/, shift and G/sub m//sup max/ with ultra-thin and ultra-low-leakage SiN-based SiON gate dielectrics

Author

Matsushita, D. ; Muraoka, K. ; Nakasaki, Y. ; Kato, K. ; Kikuchi, S. ; Sakuma, K. ; Mitani, Y. ; Eguchi, K. ; Takayanagi, M.

Author_Institution

Adv. LSI Technol. Lab., Toshiba Corp., Yokohama

fYear

2005

fDate

5-5 Dec. 2005

Lastpage

831

Abstract

The understanding of the mechanism of Delta V_fb and the improvement of [N]-DeltaV_fb relationship are essential for realizing SiON film with superior device performance. By forming the smooth SiN film with high-density NequivSi₃ structure and suppressing the deterioration of Si-N network due to oxidation, SiON films with dramatic improvement on [N]-DeltaV_fb relationship with ultra-thin EOT (0.71 nm), ultra-low leakage current (134 A/cm²) and high G_m ^max (115%) is realized. The middle temperature and low pressure nitridation and the optimization of oxidation conditions are the keys to form defect-less perfect Si₃N₄ and SiON film and to achieve these performances

Keywords

dielectric materials; dielectric thin films; leakage currents; nitridation; oxidation; 0.71 nm; SiON; oxidation conditions; pressure nitridation; ultra-low leakage current; ultra-low-leakage gate dielectrics; ultra-thin gate dielectrics; Bonding; Degradation; Dielectrics; Leakage current; MOS devices; Nitrogen; Oxidation; Semiconductor films; Silicon compounds; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International

Conference_Location

Washington, DC

Print_ISBN

0-7803-9268-X

Type

conf

DOI

10.1109/IEDM.2005.1609484

Filename

1609484