InAs/Sb∶GaAs quantum dot solar cells grown by metal organic chemical vapor deposition

Quantum dot (QD) solar cells have been proposed as a means to exceed the Shockley and Queisser efficiency limit of 31%, via the absorption of sub-band-gap photons, conventionally lost in a single junction solar cell (SC). Previous reports on fabricated InAs/GaAs QDSCs showed a slight increase in photoresponse, due to below-band gap absorption. However, they all showed a severe degradation of open circuit voltage (V_OC). Here, we report the fabrication of solar cells, containing InAs QDs. These QD solar cells show enhanced photoresponse in the below GaAs band gap region, and above all, yield almost no degradation of V_OC.