DocumentCode :
3445307
Title :
Formation of Cu(InGa)Se2 thin films by selenization using Se vapour
Author :
Singh, Udai P. ; Chiu, Chiu-Yen ; Mu-Jen Young ; Liu, J.C. ; Lan, C.W.
Author_Institution :
Dept. of Electron. & Telecommun., KIIT Univ., Bhubaneswar, India
fYear :
2009
fDate :
7-12 June 2009
Abstract :
A non-vacuum technique was demonstrated for the growth of Cu(InGa)Se2 (CIGS) thin films. The technique used is an ink formulation containing sub micron size particles of Cu/In/Ga. A thin metallic precursor layer was first formed by coating this ink onto the Glass/Mo substrate by doctor blade technique. The precursor film was dried followed by reduction reaction in hydrogen atmosphere. The precursor film was then made to react with Se vapors to form the CIGS compound. The films were characterized for surface morphology and phase formation using SEM and XRD techniques respectively. The formation of CIGS films were discussed in view of the present selenization process.
Keywords :
III-V semiconductors; X-ray diffraction; copper compounds; gallium compounds; indium compounds; scanning electron microscopy; semiconductor thin films; surface morphology; Cu(InGa)Se2; Cu-In-Ga; SEM; Se vapour; XRD; doctor blade technique; glass-Mo substrate; hydrogen atmosphere; ink formulation; nonvacuum technique; phase formation; reduction reaction; selenization; submicron size particles; surface morphology; thin films; thin metallic precursor layer; Atmosphere; Blades; Coatings; Glass; Hydrogen; Ink; Substrates; Surface morphology; Transistors; X-ray scattering;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE
Conference_Location :
Philadelphia, PA
ISSN :
0160-8371
Print_ISBN :
978-1-4244-2949-3
Electronic_ISBN :
0160-8371
Type :
conf
DOI :
10.1109/PVSC.2009.5411481
Filename :
5411481
Link To Document :
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