Formation of Cu(InGa)Se2 thin films by selenization using Se vapour

A non-vacuum technique was demonstrated for the growth of Cu(InGa)Se₂ (CIGS) thin films. The technique used is an ink formulation containing sub micron size particles of Cu/In/Ga. A thin metallic precursor layer was first formed by coating this ink onto the Glass/Mo substrate by doctor blade technique. The precursor film was dried followed by reduction reaction in hydrogen atmosphere. The precursor film was then made to react with Se vapors to form the CIGS compound. The films were characterized for surface morphology and phase formation using SEM and XRD techniques respectively. The formation of CIGS films were discussed in view of the present selenization process.