Title :
The influence of silicon nitride layer parameters on the implied Voc of CZ silicon wafers after annealing
Author :
Hameiri, Z. ; Mai, L. ; Borojevic, N. ; Javid, S. ; Tjahjono, B. ; Wang, S. ; Sproul, A. ; Wenham, S.
Author_Institution :
ARC Photovoltaics Centre of Excellence, Univ. of New South Wales, Kensington, NSW, Australia
Abstract :
The passivation potential of PECVD SiNx deposited on undiffused p-type Si surfaces is investigated. The influence of post-deposition annealing temperature and the film parameters (refractive index and thickness) on the implied Voc of textured, commercial grade, p-type CZ wafers was studied. Improvement in the implied Voc values of SiNx passivated CZ wafers was observed for two different SiNx films for all annealing temperatures in the range of 600-820°C. Excellent implied VOC values above 700 mV achieved on these wafers indicate that this process can be potentially used as rear passivation for various commercial cell technologies. Initial results on the use of this process in the fabrication of the new Double Sided Laser Doped solar cells structure demonstrate this potential.
Keywords :
annealing; passivation; plasma CVD; refractive index; silicon compounds; PECVD; SiNx; annealing temperatures; film parameters; laser doped solar cells structure; passivation; refractive index; silicon nitride layer parameters; silicon wafers; temperature 600 degC to 820 degC; undiffused p-type Si surfaces; Annealing; Coatings; III-V semiconductor materials; Optical reflection; Optical refraction; Optical surface waves; Photovoltaic cells; Ray tracing; Silicon; Solar energy;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE
Conference_Location :
Philadelphia, PA
Print_ISBN :
978-1-4244-2949-3
Electronic_ISBN :
0160-8371
DOI :
10.1109/PVSC.2009.5411485
