DocumentCode
3445353
Title
Fundamental properties of thin film resonators
Author
Lakin, K.M.
Author_Institution
TFR Technol. Inc., Redmond, OR, USA
fYear
1991
fDate
29-31 May 1991
Firstpage
201
Lastpage
206
Abstract
The author presents an overview of the physical properties of thin film resonators, composite resonators using piezoelectric thin films, and filters employing coupled resonators. There are both similarities and substantial differences between thin-film resonators and conventional single-crystal resonators used at low frequencies. For most applications the thin-film resonator is fabricated with lateral dimensions in excess of 50 to 100 times the thickness and as such can be considered a one-dimensional device for the purposes of wave propagation and circuit modeling. Composite resonators consisting of piezoelectric films supported by membranes or bulk substrates form an important part of the thin-film resonator technology. An analysis of the general quasi-mode composite resonator is presented, and the results are summarized in electrical impedance equations cast in a matrix algebra format
Keywords
crystal resonators; piezoelectric thin films; bulk substrates; circuit modeling; composite resonators; coupled resonators; electrical impedance equations; filters; high frequency resonators; matrix algebra format; membranes; mode coupling; one-dimensional device; overview; physical properties; piezoelectric thin films; thin film resonators; wave propagation; Biomembranes; Equations; Frequency; Impedance; Piezoelectric films; Resonator filters; Substrates; Thin film circuits; Thin film devices; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Frequency Control, 1991., Proceedings of the 45th Annual Symposium on
Conference_Location
Los Angeles, CA
Print_ISBN
0-87942-658-6
Type
conf
DOI
10.1109/FREQ.1991.145902
Filename
145902
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