• DocumentCode
    3445353
  • Title

    Fundamental properties of thin film resonators

  • Author

    Lakin, K.M.

  • Author_Institution
    TFR Technol. Inc., Redmond, OR, USA
  • fYear
    1991
  • fDate
    29-31 May 1991
  • Firstpage
    201
  • Lastpage
    206
  • Abstract
    The author presents an overview of the physical properties of thin film resonators, composite resonators using piezoelectric thin films, and filters employing coupled resonators. There are both similarities and substantial differences between thin-film resonators and conventional single-crystal resonators used at low frequencies. For most applications the thin-film resonator is fabricated with lateral dimensions in excess of 50 to 100 times the thickness and as such can be considered a one-dimensional device for the purposes of wave propagation and circuit modeling. Composite resonators consisting of piezoelectric films supported by membranes or bulk substrates form an important part of the thin-film resonator technology. An analysis of the general quasi-mode composite resonator is presented, and the results are summarized in electrical impedance equations cast in a matrix algebra format
  • Keywords
    crystal resonators; piezoelectric thin films; bulk substrates; circuit modeling; composite resonators; coupled resonators; electrical impedance equations; filters; high frequency resonators; matrix algebra format; membranes; mode coupling; one-dimensional device; overview; physical properties; piezoelectric thin films; thin film resonators; wave propagation; Biomembranes; Equations; Frequency; Impedance; Piezoelectric films; Resonator filters; Substrates; Thin film circuits; Thin film devices; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Frequency Control, 1991., Proceedings of the 45th Annual Symposium on
  • Conference_Location
    Los Angeles, CA
  • Print_ISBN
    0-87942-658-6
  • Type

    conf

  • DOI
    10.1109/FREQ.1991.145902
  • Filename
    145902