Title :
Robust multi-bit programmable flash memory using a resonant tunnel barrier
Author :
Kim, Shieun ; Baik, Seung Jae ; Huo, Zongliang ; Noh, Young-Jin ; Kim, Chulsung ; Han, Jeong Hee ; Yeo, In-Seok ; Chung, U-In ; Moon, Joo Tae ; Ryu, Byung-Il
Author_Institution :
Memory Div., Samsung Electron. Co. Ltd., Yongin
Abstract :
A novel multi-bit flash memory using a SiO2/a-Si/SiO 2 resonant tunnel barrier was fabricated for the first time. The SONOS-type memory with a resonant tunnel barrier is programmed only at preferential bias conditions determined by quantum tunneling conditions. By doing so, the dispersion of multi-level programmed threshold voltages, Vth, are drastically reduced, and highly reliable data storage is possible. Moreover, program/erase speed, data retention, endurance and read disturb characteristics were also shown to be better than that of a conventional SiO2 tunnel barrier
Keywords :
flash memories; programmable logic devices; resonant tunnelling devices; SONOS-type memory; SiO2-Si-SiO2; data storage; multilevel programmed threshold voltage; programmable flash memory; quantum tunneling; resonant tunnel barrier; Dispersion; Flash memory; Implants; Moon; Oxidation; Plasma applications; Resonant tunneling devices; Robustness; SONOS devices; Silicon compounds;
Conference_Titel :
Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-9268-X
DOI :
10.1109/IEDM.2005.1609493
