Title :
High frequency oscillators using cointegrated BAW thin-film piezoelectrics with microwave BJTs
Author :
Burns, S.G. ; Weber, R.J. ; Braymen, S.D.
Author_Institution :
Microelectron. Res. Center, Iowa State Univ., Ames, IA, USA
Abstract :
The authors report on the design of UHF and L-band oscillators using of sputter-deposited, thin-film, aluminum nitride resonators cointegrated with microwave fT=2.5 GHz bipolar junction transistors (BJTs). This technology uses reactive ion etching (RIE) trench-isolated 2.5-GHz BJTs cointegrated with high-Q AlN resonators synthesized with an anisotropic etch along the ⟨111⟩ crystal axes with the first-level Al metal serving as the etch stop. The resonator is used as the feedback element. Design techniques and suggestions for the novel circuit and system architectures using this technology are presented
Keywords :
MMIC; aluminium compounds; bipolar integrated circuits; crystal resonators; micromechanical devices; oscillators; piezoelectric thin films; sputter deposition; sputter etching; thin film devices; 2.5 GHz; Al-AlN-Al; AlN resonators; BAW resonators; BAW thin-film piezoelectrics; L-band oscillators; RIE; UHF oscillators; anisotropic etch; bipolar junction transistors; high-Q resonators; microwave BJTs; microwave oscillators; reactive ion etching; thin film resonators; trench isolation; Aluminum nitride; Anisotropic magnetoresistance; Circuit synthesis; Feedback; Frequency; Microwave oscillators; Microwave transistors; Sputter etching; Sputtering; Thin film transistors;
Conference_Titel :
Frequency Control, 1991., Proceedings of the 45th Annual Symposium on
Conference_Location :
Los Angeles, CA
Print_ISBN :
0-87942-658-6
DOI :
10.1109/FREQ.1991.145903
