Title :
HfSiON-CMOSFET technology for low standby power application
Author :
Takayanagi, M. ; Watanabe, T. ; Iijima, R. ; Koyama, M. ; Koike, M. ; Ino, T. ; Kamimuta, Y. ; Sekine, K. ; Eguchi, K. ; Nishiyama, A. ; Ishimaru, K.
Author_Institution :
SoC R&D Center, Toshiba Corp. Semicond. Co., Yokohama
Abstract :
Impact of implementation of HfSiON as a gate dielectric on sub-100 nm generation CMOSFET is reviewed. It is revealed that most parameters are affected when HfSiON with high Hf concentration is used, and thus, careful re-engineering is indispensable. We demonstrate HfSiON-CMOSFET for hp 65 nm LSTP application which meets the specification of ITRS roadmap by an adequate re-engineering
Keywords :
CMOS integrated circuits; MOSFET; dielectric materials; hafnium compounds; low-power electronics; silicon compounds; 100 nm; 65 nm; HfSiON; HfSiON-CMOSFET technology; ITRS roadmap; LSTP application; gate dielectric; low standby power application; Dielectrics; Electrodes; Electronic mail; Hafnium oxide; MOS capacitors; Manufacturing processes; Power engineering and energy; Research and development; Semiconductor device manufacture; Thermal stability;
Conference_Titel :
Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-9268-X
DOI :
10.1109/IEDM.2005.1609499
