Title :
Atmospheric-pressure plasma deposition of indium tin oxide
Author :
Johnson, K. ; Guruvenket, S. ; Jha, S. ; Halverson, B. ; Olson, C. ; Sailer, R.A. ; Pokhodnya, K. ; Schulz, D.L.
Author_Institution :
Center for Surface Protection - Hard Coatings, North Dakota State Univ., Fargo, ND, USA
Abstract :
Indium tin oxide (ITO) films were deposited via atmospheric-pressure plasma-enhanced chemical vapor deposition (APPD) using indium acetylacetonate, indium trifluoroacetylacetonate and tin trifluoroacetylacetonate as metal-organic precursors. A film growth temperature of 300°C gave highly-transparent films with modest conductivity. Post-deposition thermal treatments gave ITO films with resistivities one to two orders of magnitude higher than those available commercially. Compositional analysis revealed a high carbon content and annealing the films in oxygen at 400 C did not affect the C concentration. A decrease in the fluorine content in the films was observed after annealing with and the onset of crystallization was noted via XRD.
Keywords :
X-ray diffraction; annealing; atmospheric pressure; crystallisation; indium compounds; organic compounds; plasma CVD; semiconductor thin films; tin compounds; ITO; XRD; annealing; atmospheric-pressure plasma deposition; crystallization; indium acetylacetonate; indium tin oxide films; indium trifluoroacetylacetonate; metal organic precursors; plasma enhanced chemical vapor deposition; temperature 300 degC; temperature 400 degC; thermal treatments; thin film growth; tin trifluoroacetylacetonate; Annealing; Atmospheric-pressure plasmas; Chemical vapor deposition; Conductive films; Conductivity; Indium tin oxide; Plasma applications; Plasma chemistry; Plasma temperature; Thermal resistance;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE
Conference_Location :
Philadelphia, PA
Print_ISBN :
978-1-4244-2949-3
Electronic_ISBN :
0160-8371
DOI :
10.1109/PVSC.2009.5411492
