Author :
Hirano, T. ; Ando, T. ; Tai, K. ; Yamaguchi, S. ; Kato, T. ; Hiyama, S. ; Hagimoto, Y. ; Takesako, S. ; Yamagishi, N. ; Watanabe, K. ; Yamamoto, R. ; Kanda, S. ; Terauchi, S. ; Tateshita, Y. ; Tagawa, Y. ; Iwamoto, H. ; Saito, M. ; Kadomura, S. ; Nagashim
Abstract :
We propose HfSix/HfO2 gate stacks as the most suitable combination for high performance nMOSFETs. An equivalent work function (WF) to n+poly-Si was obtained by controlling Hf/Si ratio of the electrode. The highest electron mobility ever reported was achieved in the thinner Tinv region down to 1.6 nm by low temperature process without using plasma nitridation both for metal and high-k fabrication. As a result, the extremely high drive current of 1.25mA/mum at off-state leakage of 1 nA/mum and low gate leakage current of 0.3A/cm2 were obtained at Vdd = 1.3V with 65 nm gate length nMOSFETs without strain enhanced technology
Keywords :
MOSFET; electron mobility; hafnium compounds; low-temperature techniques; nitridation; silicon; 1.3 V; HfSix-HfO2; Si; equivalent work function; gate stack; high performance nMOSFET; high-k fabrication; highest electron mobility; low temperature process; thinner Tinv region; Capacitive sensors; Electrodes; Electron mobility; Fabrication; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Leakage current; MOSFET circuits; Plasma temperature;
