Author :
Subramanian, V. ; Parvais, B. ; Borremans, J. ; Mercha, A. ; Linten, D. ; Wambacq, P. ; Loo, J. ; Dehan, M. ; Collaert, N. ; Kubicek, S. ; Lander, R.J.P. ; Hooker, J.C. ; Cubaynes, F.N. ; Donnay, S. ; Jurczak, M. ; Groeseneken, G. ; Sansen, W. ; Decoutere
Abstract :
Comparison of digital and analog figures-of-merit of FinFETs and planar bulk MOSFETs reveals an interesting trade-off in analog/RF design space. It is seen that FinFETs possess key advantages over bulk FETs for applications around 5 GHz where the performance-power trade-off is important. In case of higher frequency applications bulk MOSFETs are shown to hold the advantage on account of their higher transconductance (Gm), provided a degraded voltage gain and a higher leakage current can be tolerated
Keywords :
MOSFET; analogue integrated circuits; field effect transistors; FinFET; analog/RF design; circuit-level analog performance; figures-of-merit; higher transconductance; planar bulk FET; planar bulk MOSFET; trade-off; Circuits; Degradation; FETs; FinFETs; High K dielectric materials; High-K gate dielectrics; MOSFETs; Radio frequency; Transconductance; Voltage;
