Title :
Vth-tunable CMIS platform with high-k gate dielectrics and variability effect for 45nm node
Author :
Hayashi, T. ; Mizutani, M. ; Inoue, M. ; Yugami, J. ; Tsuchimoto, J. ; Anma, M. ; Komori, S. ; Tsukamoto, Kazuya ; Tsukamoto, K. ; Nii, K. ; Nishida, Y. ; Sayama, H. ; Yamashita, T. ; Oda, H. ; Eimori, T. ; Ohji, Y.
Author_Institution :
Dept. of Wafer Process Eng. Dev., Renesas Technol. Corp., Itami
Abstract :
A simple high-k/poly-Si dual-gate CMIS platform with a novel method to control threshold voltage (Vth) has been proposed for 45nm node. The PMIS Vth control method is a simple selective fluorine-implantation to channel region with optimizing extension and pocket implantation. We have also demonstrated the transistor variability improvement with our HfSiON/poly-Si platform, compared to SiON/poly-Si platform by practical fully-operating 90nm-node 8Mb-SRAMs
Keywords :
SRAM chips; hafnium compounds; high-k dielectric thin films; oxygen compounds; silicon compounds; voltage control; 45 nm; 8 MBytes; 90 nm; CMIS platform; HfSiON; SRAM; control threshold voltage; fluorine-implantation; high-k gate dielectrics; pocket implantation; Capacitance; Degradation; Doping; Fabrication; Fluctuations; High K dielectric materials; High-K gate dielectrics; Semiconductor process modeling; Threshold voltage; Voltage control;
Conference_Titel :
Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-9268-X
DOI :
10.1109/IEDM.2005.1609505
