High mobility n-channel and p-channel nanocrystalline silicon thin-film transistors

Author

Lee, Czang-Ho ; Sazonov, Andrei ; Nathan, Arokia

Author_Institution

Dept. of Electr. & Comput. Eng., Waterloo Univ., Ont.

fYear

2005

fDate

5-5 Dec. 2005

Firstpage

915

Lastpage

918

Abstract

We report high hole and electron mobilities in nanocrystalline silicon (nc-Si:H) top-gate staggered thin-film transistors (TFTs) fabricated by direct plasma-enhanced chemical vapor deposition (PECVD) at 260degC. The n-channel nc-Si:H TFT with n⁺ nc-Si:H ohmic contacts shows a field-effect electron mobility (mu _nFE) of 130 cm²/Vs, which increases to 150 cm²/Vs with Cr-silicide contacts, along with a field-effect hole mobility (mu _hFE) of 25 cm²/Vs. To the best of our knowledge, the hole and electron mobilities reported here are the highest achieved to date using direct PECVD

Keywords

electron mobility; field effect transistors; hole mobility; plasma CVD; thin film transistors; 260 C; PECVD; direct plasma-enhanced chemical vapor deposition; field-effect electron mobility; field-effect hole mobility; high electron mobilities; high hole mobilities; nanocrystalline silicon thin-film transistors; ohmic contacts; silicide contacts; Amorphous materials; Chemical vapor deposition; Crystallization; Electron mobility; Hydrogen; Ohmic contacts; Plasma chemistry; Plasma temperature; Silicon; Thin film transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International

Conference_Location

Washington, DC

Print_ISBN

0-7803-9268-X

Type

conf

DOI

10.1109/IEDM.2005.1609508

Filename

1609508