Title :
High mobility n-channel and p-channel nanocrystalline silicon thin-film transistors
Author :
Lee, Czang-Ho ; Sazonov, Andrei ; Nathan, Arokia
Author_Institution :
Dept. of Electr. & Comput. Eng., Waterloo Univ., Ont.
Abstract :
We report high hole and electron mobilities in nanocrystalline silicon (nc-Si:H) top-gate staggered thin-film transistors (TFTs) fabricated by direct plasma-enhanced chemical vapor deposition (PECVD) at 260degC. The n-channel nc-Si:H TFT with n+ nc-Si:H ohmic contacts shows a field-effect electron mobility (mu nFE) of 130 cm2/Vs, which increases to 150 cm2/Vs with Cr-silicide contacts, along with a field-effect hole mobility (mu hFE) of 25 cm2/Vs. To the best of our knowledge, the hole and electron mobilities reported here are the highest achieved to date using direct PECVD
Keywords :
electron mobility; field effect transistors; hole mobility; plasma CVD; thin film transistors; 260 C; PECVD; direct plasma-enhanced chemical vapor deposition; field-effect electron mobility; field-effect hole mobility; high electron mobilities; high hole mobilities; nanocrystalline silicon thin-film transistors; ohmic contacts; silicide contacts; Amorphous materials; Chemical vapor deposition; Crystallization; Electron mobility; Hydrogen; Ohmic contacts; Plasma chemistry; Plasma temperature; Silicon; Thin film transistors;
Conference_Titel :
Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-9268-X
DOI :
10.1109/IEDM.2005.1609508
