2-bit poly-Si-TFT nonvolatile memory using hafnium oxide, hafnium silicate and zirconium silicate

Author

Lin, Yu-Hsien ; Chien, Chao-Hsin ; Chou, Tung-Hung ; Chao, Tien-Sheng ; Chang, Chun-Yen ; Lei, Tan-Fu

Author_Institution

Inst. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu

fYear

2005

fDate

5-5 Dec. 2005

Firstpage

927

Lastpage

930

Abstract

In this paper, the authors, for the first time, have successfully fabricated SONOS-type poly-Si-TFT memories employing three kinds of high-k dielectrics, including HfO₂, Hf-silicate and Zr-silicate, as the trapping layer with low-thermal budget processing. It was demonstrated that the fabricated memories exhibit good performance in terms of relatively large memory window, high program/erase speed (1ms/10ms), long retention time (>10⁶s for 20% charge loss) and negligible read/write disturbances. In particular, 2-bit operation has been successfully demonstrated

Keywords

hafnium compounds; high-k dielectric thin films; random-access storage; thin film transistors; zirconium compounds; HfO₂; SONOS memories; hafnium silicate; high-k dielectrics; nonvolatile memory; thermal budget processing; thin film transistor; trapping layer; zirconium silicate; Chaos; Fabrication; Hafnium oxide; High-K gate dielectrics; Laboratories; Nonvolatile memory; Read-write memory; Silicon; Thin film transistors; Zirconium;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International

Conference_Location

Washington, DC

Print_ISBN

0-7803-9268-X

Type

conf

DOI

10.1109/IEDM.2005.1609511

Filename

1609511