DocumentCode
3445785
Title
A novel driving circuit topology to improve IGBT gate driving performance
Author
Wei Su ; Yulin Zhong ; Xuhui Wen ; Jun Liu
Author_Institution
Electr. Eng., Beijing, China
fYear
2013
fDate
26-29 Oct. 2013
Firstpage
83
Lastpage
86
Abstract
The conventional totem-pole BJT used in IGBT gate driving circuit limit the maximum output current due to desaturation of BJT´s collector-to-base voltage. This paper presente a novel circuit topology to increase the output current of totem-pole BJT and also decrease the BJT power loss. As a result, the switching speed of IGBT can be raised and the switching loss of IGBT is reduced. At last, both the Pspice simulation and experimental results based on the HCPL-316J driving IC verity the advantage of the topology.
Keywords
insulated gate bipolar transistors; network topology; BJT power loss; HCPL-316J; IGBT gate; Pspice simulation; collector-to-base voltage; driving circuit topology; totem-pole BJT; Circuit topology; Discharges (electric); Insulated gate bipolar transistors; Logic gates; Resistance; Topology; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical Machines and Systems (ICEMS), 2013 International Conference on
Conference_Location
Busan
Print_ISBN
978-1-4799-1446-3
Type
conf
DOI
10.1109/ICEMS.2013.6754524
Filename
6754524
Link To Document