Highly efficient current scaling AMOLED panel employing a new current mirror pixel circuit fabricated by excimer laser annealed poly-Si TFTs

Author

Lee, Jae-Hoon ; Nam, Woo-Jin ; Shin, Hee-Sun ; Han, Min-Koo ; Ha, Yong-Min ; Lee, Chang-Hwan ; Choi, Hong-Seok ; Hong, Soon-Kwang

Author_Institution

Sch. of Electr. Eng., Seoul Nat. Univ.

fYear

2005

fDate

5-5 Dec. 2005

Firstpage

931

Lastpage

934

Abstract

We propose and fabricate highly efficient current scaling AMOLED panel employing excimer laser annealed poly-Si TFTs, which successfully compensate the non-uniformity of I_OLED due to the grain boundaries and residual image caused by a hysteresis phenomenon in poly-Si TFT. The proposed 2.4 inch panel employing a new current mirror pixel circuit successfully reduces a nonuniformity of the luminance from 41% to 9.1%, and eliminates residual image, compared with conventional 2-TFT pixel array. The proposed pixel circuit can also increase the data current by 57% and decrease the pixel charging time by 21%, compared with a traditional current mirror pixel

Keywords

current mirrors; excimer lasers; laser beam annealing; organic light emitting diodes; thin film transistors; TFT pixel array; current mirror pixel circuit; current scaling AMOLED panel; excimer laser; grain boundaries; hysteresis phenomenon; pixel charging time; residual image; thin film transistors; Active matrix organic light emitting diodes; Annealing; Circuits; Electric variables; Grain boundaries; Mirrors; Organic light emitting diodes; Pixel; Silicon; Thin film transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International

Conference_Location

Washington, DC

Print_ISBN

0-7803-9268-X

Type

conf

DOI

10.1109/IEDM.2005.1609512

Filename

1609512