Title :
A new di/dt control gate drive circuit for IGBTs to reduce EMI noise and switching losses
Author :
Takizawa, Satoki ; Igarashi, Seiki ; Kuroki, Kazuo
Author_Institution :
Fuji Electr. Corp. Res. & Dev. Ltd., Tokyo, Japan
Abstract :
In this paper, a new di/dt control gate drive circuit for IGBT devices is proposed. By this circuit, the switching performances of IGBT such as dv/dt, di/dt, surge voltage and also switching losses are reduced. This scheme can also eliminate a snubber circuit from the inverter system. From experimental tests, the EMI noise level is reduced by more than 15 dBuV/m as compared with conventional systems
Keywords :
driver circuits; equivalent circuits; insulated gate bipolar transistors; power bipolar transistors; switching circuits; EMI noise level; IGBT devices; di/dt control gate drive circuit; dv/dt; inverter system; snubber circuit elimination; surge voltage; switching losses; switching performance; Circuit testing; Electromagnetic interference; Insulated gate bipolar transistors; Inverters; Snubbers; Surges; Switching circuits; Switching loss; System testing; Voltage;
Conference_Titel :
Power Electronics Specialists Conference, 1998. PESC 98 Record. 29th Annual IEEE
Conference_Location :
Fukuoka
Print_ISBN :
0-7803-4489-8
DOI :
10.1109/PESC.1998.703241
