DocumentCode :
3446005
Title :
Numerical simulations of novel InGaN solar cells
Author :
Brown, G.F. ; Ager, J.W., III ; Walukiewicz, W. ; Wu, J.
Author_Institution :
Dept. of Mater. Sci. & Eng., Univ. of California, Berkeley, CA, USA
fYear :
2009
fDate :
7-12 June 2009
Abstract :
Finite element simulations of novel InGaN solar cells, requiring no p-type InGaN, were carried out using the commercial software package APSYS. Simulations show that efficient, compositionally graded p-GaN/n-InxGa1-xN solar cells can be achieved, provided the graded layer is confined within the depletion region. These compositionally graded solar cells can be used as the top cell in an InGaN/Si double-junction cell to achieve AM 1.5 efficiencies over 27% using realistic material parameters.
Keywords :
III-V semiconductors; elemental semiconductors; finite element analysis; gallium compounds; indium compounds; silicon; solar cells; wide band gap semiconductors; APSYS software package; GaN-InxGa1-xN; InGaN-Si; compositionally graded solar cells; depletion region; double-junction cell; finite element simulations; Charge carrier processes; Dielectric materials; Finite element methods; Gallium nitride; Indium; Interpolation; Numerical simulation; Photonic band gap; Photovoltaic cells; Software packages;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE
Conference_Location :
Philadelphia, PA
ISSN :
0160-8371
Print_ISBN :
978-1-4244-2949-3
Electronic_ISBN :
0160-8371
Type :
conf
DOI :
10.1109/PVSC.2009.5411535
Filename :
5411535
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3446005
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