• DocumentCode
    3446007
  • Title

    Low-cost self-aligned SiGeC HBT module for high-performance bulk and SOI RFCMOS platforms

  • Author

    Chevalier, P. ; Lagarde, D. ; Avenier, G. ; Schwartzmann, T. ; Barbalat, B. ; Lenoble, D. ; Bustos, J. ; Pourchon, F. ; Saguin, F. ; Vandelle, B. ; Rubaldo, L. ; Chantre, A.

  • Author_Institution
    STMicroelectron., Crolles
  • fYear
    2005
  • fDate
    5-5 Dec. 2005
  • Firstpage
    963
  • Lastpage
    966
  • Abstract
    A low-cost SiGeC HBT module for bulk and SOI RFCMOS platforms is described. The device features an all-implanted collector and a novel fragmented emitter layout, and requires 4 masks only. Record performances are demonstrated, with cut-off frequencies fT/f max as large as 230/240GHz and 140/200GHz on bulk and thin SOI substrates respectively
  • Keywords
    CMOS integrated circuits; Ge-Si alloys; germanium compounds; heterojunction bipolar transistors; integrated circuit layout; radiofrequency integrated circuits; silicon compounds; silicon-on-insulator; HBT module; RFCMOS; SOI; SiGeC; cut off frequencies; fragmented emitter layout; BiCMOS integrated circuits; CMOS process; CMOS technology; Cutoff frequency; Epitaxial growth; Heterojunction bipolar transistors; Radio frequency; Silicon carbide; Substrates; System-on-a-chip;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International
  • Conference_Location
    Washington, DC
  • Print_ISBN
    0-7803-9268-X
  • Type

    conf

  • DOI
    10.1109/IEDM.2005.1609521
  • Filename
    1609521
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3446007