Title :
Low-cost self-aligned SiGeC HBT module for high-performance bulk and SOI RFCMOS platforms
Author :
Chevalier, P. ; Lagarde, D. ; Avenier, G. ; Schwartzmann, T. ; Barbalat, B. ; Lenoble, D. ; Bustos, J. ; Pourchon, F. ; Saguin, F. ; Vandelle, B. ; Rubaldo, L. ; Chantre, A.
Author_Institution :
STMicroelectron., Crolles
Abstract :
A low-cost SiGeC HBT module for bulk and SOI RFCMOS platforms is described. The device features an all-implanted collector and a novel fragmented emitter layout, and requires 4 masks only. Record performances are demonstrated, with cut-off frequencies fT/f max as large as 230/240GHz and 140/200GHz on bulk and thin SOI substrates respectively
Keywords :
CMOS integrated circuits; Ge-Si alloys; germanium compounds; heterojunction bipolar transistors; integrated circuit layout; radiofrequency integrated circuits; silicon compounds; silicon-on-insulator; HBT module; RFCMOS; SOI; SiGeC; cut off frequencies; fragmented emitter layout; BiCMOS integrated circuits; CMOS process; CMOS technology; Cutoff frequency; Epitaxial growth; Heterojunction bipolar transistors; Radio frequency; Silicon carbide; Substrates; System-on-a-chip;
Conference_Titel :
Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-9268-X
DOI :
10.1109/IEDM.2005.1609521
