Understanding, modeling and optimizing vacancy engineering for stable highly boron-doped ultrashallow junctions

This work presents breakthrough results on the physics, modeling and application of ion-implanted vacancies for high-performance B-doped ultrashallow junctions. We demonstrate for the first time electrically active B concentrations approaching 10²¹/cm³, achieved by low-temperature annealing, without preamorphisation. Source/drain (S/D) junctions formed by advanced vacancy engineering implants (VEI) are activated far above solubility, are stable with respect to deactivation, and are practically diffusionless. Furthermore sheet resistance R_s is predicted to stay almost constant with decreasing junction depth X_j outperforming other S/D engineering approaches beyond the 45 nm node