DocumentCode :
3446144
Title :
Thermal phenomena in deeply scaled MOSFETs
Author :
Rowlette, Jeremy ; Pop, Eric ; Sinha, Sanjiv ; Panzer, Mathew ; Goodson, Kenneth
Author_Institution :
Depts. of Electr. & Mech. Eng., Stanford Univ., CA
fYear :
2005
fDate :
5-5 Dec. 2005
Firstpage :
984
Lastpage :
987
Abstract :
Thermal phenomena are having an increasing influence on drive and leakage currents in modern transistors. This trend is accelerated for confined-geometry devices, which include thermally-resistive interfaces and materials with low thermal conductivity (e.g. SiO2, Si 1-xGex). This paper summarizes the nanotransistor thermal design challenges and reviews the latest advancements in electro-thermal modeling
Keywords :
MOSFET; leakage currents; thermal resistance; SiGe; SiO2; confined geometry devices; deeply scaled MOSFET; electrothermal modeling; leakage currents; low thermal conductivity; nanotransistor thermal design; thermal phenomena; thermally resistive interfaces; Acoustic scattering; Energy consumption; MOSFETs; Particle scattering; Phonons; Power generation; Temperature; Thermal conductivity; Thermal resistance; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-9268-X
Type :
conf
DOI :
10.1109/IEDM.2005.1609527
Filename :
1609527
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3446144
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