A full self-consistent methodology for strain-induced effects characterization in silicon devices

Author

Fantini, P. ; Ghetti, A. ; Carnevale, G.P. ; Bonera, E. ; Rideau, D.

Author_Institution

STMicroelectron., Agrate Brianza

fYear

2005

fDate

5-5 Dec. 2005

Firstpage

992

Lastpage

995

Abstract

The mechanical stress induced by shallow trench isolation (STI) has been characterized by using complementary techniques: 1) TCAD simulation compared with UV-muRaman data to determine the lattice misfit strain; 2) full band Monte Carlo simulation and electrical measurements to study the impact on the transport properties. For the first time, an iterative methodology emphasising the synergy among these techniques is presented. The excellent agreement with our electrical data demonstrated that our methodology is a powerful and useful tool to predict the performance of devices with a controlled stress

Keywords

MOSFET; Monte Carlo methods; Raman spectroscopy; isolation technology; silicon; silicon-on-insulator; stress effects; technology CAD (electronics); ultraviolet spectroscopy; Monte Carlo simulation; TCAD simulation; UV-muRaman data; electrical measurements; iterative methodology; lattice misfit strain; mechanical stress; shallow trench isolation; silicon devices; strain-induced effects characterization; transport properties; CMOS technology; Capacitive sensors; Electric variables measurement; Lattices; MOSFET circuits; Mechanical variables measurement; Silicon devices; Strain measurement; Stress; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International

Conference_Location

Washington, DC

Print_ISBN

0-7803-9268-X

Type

conf

DOI

10.1109/IEDM.2005.1609529

Filename

1609529