2 /spl mu/m emission from Si/Ge heterojunction LED and up to 1.55 /spl mu/m detection by GOI detectors with strain-enhanced features

Author

Liao, M.H. ; Yu, C.Y. ; Huang, C.F. ; Lin, C.H. ; Lee, C.-J. ; Yu, M.H. ; Chang, S.T. ; Liang, C.Y. ; Lee, C.-Y. ; Guo, T.H. ; Chang, C.C. ; Liu, C.W.

Author_Institution

Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei

fYear

2005

fDate

5-5 Dec. 2005

Lastpage

1004

Abstract

The Ge/Si heterojunction MOS LED can emit ~2 mum light due to the radiative recombination at type II heterojunction. The fully depleted 800 nm germanium on insulator (GOI) can increase the responsivity and the speed of the MOS detector due to the large absorption of Ge and the electrical field in the active layer, respectively. Moreover, the external strain can tune the emission energy (~11 meV) by modifying the band structure. The responsivity of GOI MOS detector is also improved by ~10% using the external strain. Both heterojunction and strain (internal or external) can enhance the performance of Si-based optoelectronics

Keywords

Ge-Si alloys; MIS devices; integrated optoelectronics; light emitting diodes; photodetectors; semiconductor heterojunctions; 2 micron; 800 nm; GOI detectors; MOS detector; SiGe; electrical field; germanium on insulator; heterojunction MOS LED; optoelectronics; strain-enhanced features; Absorption; Capacitive sensors; Computer vision; Detectors; Electrodes; Heterojunctions; Light emitting diodes; Photodetectors; Substrates; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International

Conference_Location

Washington, DC

Print_ISBN

0-7803-9268-X

Type

conf

DOI

10.1109/IEDM.2005.1609532

Filename

1609532