Title :
Dislocation engineering for a silicon-based light emitter at 1.5 /spl mu/
Author :
Kittler, M. ; Reiche, M. ; Arguirov, T. ; Seifert, W. ; Yu, X.
Author_Institution :
IHP Microelectron., Frankfurt
Abstract :
A new concept for a Si light emitting diode (LED) capable of emitting at 1.5 mum efficiently is proposed. It utilizes radiation from a well-defined dislocation network created in a reproducible manner by Si wafer direct bonding. The wavelength of the light emitted from the network can be tailored by adjusting the misorientation between the Si wafers
Keywords :
annealing; dislocation structure; elemental semiconductors; ion implantation; light emitting diodes; silicon; wafer bonding; 1.5 micron; Si; dislocation engineering; light emitting diode; wafer direct bonding; Annealing; Boron; CMOS technology; Ion implantation; Light emitting diodes; Light sources; Optical modulation; Stimulated emission; Temperature; Wafer bonding;
Conference_Titel :
Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-9268-X
DOI :
10.1109/IEDM.2005.1609533
