DocumentCode :
3446286
Title :
Theoretical investigation on optimum bandgap energies of Ge-Based III–V Triple-Junction solar cells for long-term energy production on mars
Author :
Hoheisel, R. ; Philipps, S.P. ; Dimroth, F. ; Bett, A.W.
Author_Institution :
Fraunhofer Inst. for Solar Energy Syst., Freiburg, Germany
fYear :
2009
fDate :
7-12 June 2009
Abstract :
Based on theoretical considerations, optimum triple-junction bandgap combinations are determined to achieve highest electrical energy production for a long-term mission on the Martian surface. The solar cell structures analyzed in this contribution are based on the GaInP/GaInAs/Ge material system. Realistic ambient temperature and atmospheric dust profiles as well as spectral illumination conditions as observed on the Martian surface are considered. The variation of optimum bandgap combinations during the yearly cycle is discussed with respect to the environmental parameters.
Keywords :
III-V semiconductors; Mars; elemental semiconductors; energy gap; gallium compounds; germanium; indium compounds; solar cells; GaInP-GaInAs-Ge; III-V triple junction solar cells; Mars; Martian surface; electrical energy production; long term energy production; long term mission; optimum bandgap energies; spectral illumination; Information analysis; Mars; Photonic band gap; Photovoltaic cells; Production; Solar power generation; Space missions; Storms; Sun; Temperature distribution;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE
Conference_Location :
Philadelphia, PA
ISSN :
0160-8371
Print_ISBN :
978-1-4244-2949-3
Electronic_ISBN :
0160-8371
Type :
conf
DOI :
10.1109/PVSC.2009.5411557
Filename :
5411557
Link To Document :
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