Failure mechanisms of gallium nitride LEDs related with passivation

Author

Meneghini, M. ; Trevisanello, L.R. ; Levada, S. ; Meneghesso, G. ; Tamiazzo, G. ; Zanoni, E. ; Zahner, T. ; Zehnder, U. ; Härle, V. ; Straus, Uwe

Author_Institution

Dept. of Inf. Eng., Padova Univ.

fYear

2005

fDate

5-5 Dec. 2005

Lastpage

1012

Abstract

This paper analyzes the thermally-activated failure mechanisms of GaN LEDs under thermal overstress related with the presence of a PECVD SiN passivation layer. It is shown that the properties of the passivation layer can remarkably affect devices reliability during high-temperature stress: degradation mechanisms identified consist in emission crowding and series resistance increase, attributed to the thermally-activated indiffusion of hydrogen from the passivation to the p-layer, and subsequent p-doping compensation

Keywords

III-V semiconductors; failure analysis; gallium compounds; light emitting diodes; passivation; plasma CVD; semiconductor device reliability; silicon compounds; wide band gap semiconductors; GaN; PECVD; SiN; degradation mechanisms; devices reliability; doping compensation; emission crowding; failure mechanisms; gallium nitride LED; high-temperature stress; passivation layer; series resistance; thermal overstress; Failure analysis; Gallium nitride; III-V semiconductor materials; Light emitting diodes; Mechanical factors; Passivation; Silicon compounds; Thermal degradation; Thermal resistance; Thermal stresses;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International

Conference_Location

Washington, DC

Print_ISBN

0-7803-9268-X

Type

conf

DOI

10.1109/IEDM.2005.1609534

Filename

1609534