Title :
Failure mechanisms of gallium nitride LEDs related with passivation
Author :
Meneghini, M. ; Trevisanello, L.R. ; Levada, S. ; Meneghesso, G. ; Tamiazzo, G. ; Zanoni, E. ; Zahner, T. ; Zehnder, U. ; Härle, V. ; Straus, Uwe
Author_Institution :
Dept. of Inf. Eng., Padova Univ.
Abstract :
This paper analyzes the thermally-activated failure mechanisms of GaN LEDs under thermal overstress related with the presence of a PECVD SiN passivation layer. It is shown that the properties of the passivation layer can remarkably affect devices reliability during high-temperature stress: degradation mechanisms identified consist in emission crowding and series resistance increase, attributed to the thermally-activated indiffusion of hydrogen from the passivation to the p-layer, and subsequent p-doping compensation
Keywords :
III-V semiconductors; failure analysis; gallium compounds; light emitting diodes; passivation; plasma CVD; semiconductor device reliability; silicon compounds; wide band gap semiconductors; GaN; PECVD; SiN; degradation mechanisms; devices reliability; doping compensation; emission crowding; failure mechanisms; gallium nitride LED; high-temperature stress; passivation layer; series resistance; thermal overstress; Failure analysis; Gallium nitride; III-V semiconductor materials; Light emitting diodes; Mechanical factors; Passivation; Silicon compounds; Thermal degradation; Thermal resistance; Thermal stresses;
Conference_Titel :
Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-9268-X
DOI :
10.1109/IEDM.2005.1609534
