Title :
A novel silicon-nitride based light-emitting transistor (SiNLET): optical/electrical properties of a SONOS-type three-terminal electroluminescence device for optical communication in ULSI
Author :
Yeh, C.C. ; Tsai, W.J. ; Lu, T.C. ; Chen, Y.R. ; Pan, F.M. ; Gu, S.H. ; Liao, Y.Y. ; Kao, H.L. ; Ou, T.F. ; Zous, N.K. ; Ting, WenChi ; Wang, Tahui ; Ku, Joseph ; Chih-Yuan Lu
Author_Institution :
Technol. Dev. Center, Macronix Int. Co.,Ltd, Hsinchu
Abstract :
A novel silicon-nitride based light-emitting transistor (SiNLET) is proposed for the first time. This three-terminal electroluminescence device uses a SONOS-type device structure, and its process is compatible to standard CMOS devices. Photons are generated by Fowler-Nordheim electron (FN-E) tunnel-injection, band-to-band tunneling induced hot-hole (BTBT-HH) injection, and carrier scattering/trapping/recombination via nitride traps. SiNLET with an effective device area of 0.616 mum2 is demonstrated for display and optical communication purposes
Keywords :
ULSI; electric properties; electroluminescent devices; electron-hole recombination; hole traps; integrated optoelectronics; light emitting devices; optical interconnections; optical properties; photons; silicon compounds; tunnelling; BTBT-HH injection; CMOS devices; FN-E tunnel-injection; Fowler-Nordheim electron tunnel-injection; SONOS-type device structure; SONOS-type electroluminescence device; SiN; SiNLET; ULSI; band-to-band tunneling induced hot-hole injection; carrier recombination; carrier scattering; carrier trapping; electrical properties; nitride traps; optical communication; optical properties; silicon-nitride based light-emitting transistor; three-terminal electroluminescence device; CMOS process; Electroluminescent devices; Electron traps; Hot carriers; Light scattering; Optical devices; Optical fiber communication; Optical scattering; Tunneling; Ultra large scale integration;
Conference_Titel :
Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-9268-X
DOI :
10.1109/IEDM.2005.1609535
