Title :
Remote linear radio frequency PECVD deposited high quality a-Si:H(P) layers and their application in SI heterojunction structures
Author :
Wu, Y. ; Devilee, C. ; Van Aken, B.B. ; Boulif, K. ; Soppe, W.J. ; Weeber, A.W. ; Geerligs, L.J.
Author_Institution :
ECN Solar Energy, Petten, Netherlands
Abstract :
In this paper, we report on deposition and properties of high quality boron doped p-type amorphous Si (a-Si:H(p)) layers on n-type float zone Si(100) wafers by remote linear radio frequency plasma-enhanced CVD. The a-Si:H(p) layers show excellent surface passivation that is comparable to the one of a-Si:H intrinsic layers (a-Si:H(i)), and high stability of the passivation when stored in the dark . Additionally, the measured dark conductivity of deposited a-Si(p) is increased up to >7×10-6 S/cm by annealing. In a Si heterojunction cell structure, the a-Si:H(p) layer will be the emitter on an n-type base wafer. The effective lifetime of test structures of a-Si(p)/c-Si(n)/a-Si(n) has approached 1 ms, and a high pseudo fill factor and open circuit voltage have been obtained from a SunsVoc measurement. We conclude that these a-Si:H(p) layers are very promising for the application in high performance silicon heterojunction solar cells without using an intermediate a-Si:H(i) layer.
Keywords :
amorphous semiconductors; boron; hydrogen; passivation; plasma CVD; silicon; solar cells; Si:H,B; boron doped p-type amorphous layers; dark conductivity; deposited high quality layers; intrinsic layers; n-type float zone; open circuit voltage; plasma enhanced CVD; remote linear radio frequency PECVD; silicon heterojunction solar cells; silicon heterojunction structures; surface passivation; Amorphous materials; Boron; Circuit testing; Heterojunctions; Passivation; Plasma applications; Plasma measurements; Plasma properties; Plasma stability; Radio frequency;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE
Conference_Location :
Philadelphia, PA
Print_ISBN :
978-1-4244-2949-3
Electronic_ISBN :
0160-8371
DOI :
10.1109/PVSC.2009.5411561
