DocumentCode
3446449
Title
Up-scaling ILGAR In2 S3 buffer layers production for chalcopyrite solar modules
Author
Allsop, N.A. ; Niesen, T.P. ; Gledhill, S.E. ; Krüger, M. ; Köhler, T. ; Lux-Steiner, M.C. ; Fischer, Ch.-H.
Author_Institution
Helmholtz Zentrum, Berlin, Germany
fYear
2009
fDate
7-12 June 2009
Abstract
Indium sulfide buffer layers produced by the spray ion-layer-gas-reaction (ILGAR) have already been shown to be a suitable replacement for the standard CdS layer in chalcopyrite based thin film solar cells. However, to date, all of the results have been shown on small area solar cells. Here we demonstrate both the up-scaling of the spray ILGAR process for the first time and show results for mini-modules based on Cu(In,Ga)(Se,S)2 (CIGSSe) absorbers from the AVANCIS pilot line. The mini-module efficiencies reach 12.4% and damp heat stability is comparable to CdS buffered references. Analysis of the modules by thermography shows a strong correlation between homogeneity and module performance. This preliminary up-scaled 10 Ã 10 cm deposition chamber paved the way for further large scale development. This includes a tape coater, built in-house, a 30 Ã 30 cm machine under construction with STANGL semiconductor equipment AG and a roll-to-roll ILGAR machine, which is currently part of the pilot production line operating at CIS-Solartechnik in Hamburg.
Keywords
buffer layers; copper compounds; gallium compounds; indium compounds; infrared imaging; selenium compounds; solar absorber-convertors; solar cells; ternary semiconductors; AVANCIS pilot line; CIS-Solartechnik; CuInGa(SeS)2; Hamburg; ILGAR; In2S3; buffer layers production; chalcopyrite solar modules; solar absorbers; spray ion layer gas reaction; spray ion-layer-gas-reaction; thermography; thin film solar cells; Buffer layers; Chemicals; Indium; Photovoltaic cells; Production; Spraying; Sputtering; Substrates; Testing; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE
Conference_Location
Philadelphia, PA
ISSN
0160-8371
Print_ISBN
978-1-4244-2949-3
Electronic_ISBN
0160-8371
Type
conf
DOI
10.1109/PVSC.2009.5411577
Filename
5411577
Link To Document