A fully monolithic, GaAs/AlGaAs HBT C-band transmitter

Author

Maoz, Barak ; Bedard, Brian E. ; Oki, Aaron

Author_Institution

Hittite Microwave Corp., Woburn, MA, USA

fYear

1991

fDate

9-10 Sep 1991

Firstpage

47

Lastpage

50

Abstract

A novel C-band transmitter on a single chip has been implemented using GaAs/AlGaAs HBT (heterojunction bipolar transistor) technology. The chip includes a 4-GHz VCO with 300-MHz tunability, a medium-power amplifier, and a voltage regulator along with reactive matching networks. It measures 1.35×1.25×0.25 mm and operates from a single +10-V supply, In order to minimize chip cost, a process featuring a relaxed 3-μm emitter size, achieving f _t of 24 GHz, was used. The transmitter output power measures +17 dBm at 4 GHz with noise side bands of -84 dBc at 100 kHz away from the carrier

Keywords

III-V semiconductors; MMIC; aluminium compounds; bipolar integrated circuits; gallium arsenide; heterojunction bipolar transistors; transmitters; 10 V; 3 micron; 4 GHz; C-band transmitter; GaAs-AlGaAs; HBT; MMIC; SHF; VCO; heterojunction bipolar transistor; medium-power amplifier; reactive matching networks; voltage regulator; Costs; Gallium arsenide; Heterojunction bipolar transistors; Power generation; Regulators; Semiconductor device measurement; Size measurement; Transmitters; Voltage; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar Circuits and Technology Meeting, 1991., Proceedings of the 1991

Conference_Location

Minneapolis, MN

Print_ISBN

0-7803-0103-X

Type

conf

DOI

10.1109/BIPOL.1991.160954

Filename

160954