DocumentCode :
3446463
Title :
Preparation of Quantum Hall Effect Device Arrays
Author :
Hein, G. ; Schumacher, B. ; Ahlers, F.J.
Author_Institution :
Phys.-Technische Bundesanstalt, Braunschweig
fYear :
2004
fDate :
38139
Firstpage :
273
Lastpage :
274
Abstract :
The preparation of quantum Hall effect device arrays at the PTB using multiterminal connections has been improved by the use of SiO2 as insulation material for the multilayer connections. The used lay-out avoids connections crossing the active sections of the devices. Arrays with ten devices in series as well as in parallel have been realised and successfully tested
Keywords :
Hall effect devices; electric resistance measurement; quantum Hall effect; SiO2; insulation material; multilayer connections; multiterminal connections; quantum Hall effect device; Circuit noise; Etching; Gold; Hall effect devices; Insulation; Magnetic field measurement; Resistors; Testing; Voltage; Wires;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Precision Electromagnetic Measurements Digest, 2004 Conference on
Conference_Location :
London
Print_ISBN :
0-7803-8494-6
Electronic_ISBN :
0-7803-8494-6
Type :
conf
DOI :
10.1109/CPEM.2004.305569
Filename :
4097224
Link To Document :
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