DocumentCode
3446502
Title
The origin of variable retention time in DRAM
Author
Mori, Yuki ; Ohyu, Kiyonori ; Okonogi, Kensuke ; Yamada, Ren-ichi
Author_Institution
Central Res. Lab., Hitachi, Ltd., Tokyo
fYear
2005
fDate
5-5 Dec. 2005
Firstpage
1034
Lastpage
1037
Abstract
To investigate the origin of DRAM variable retention time (VRT), we use test structures and carefully measure the time dependence of leakage current in DRAM. Consequently we find for the first time that the junction leakage current fluctuates just like random telegraph signal. We analyze the leakage current fluctuation in detail and find it the origin of VRT
Keywords
DRAM chips; leakage currents; DRAM; VRT; junction leakage current; random telegraph signal; variable retention time; Circuit testing; Current measurement; Fluctuations; Laboratories; Leakage current; Random access memory; Subthreshold current; Telegraphy; Temperature dependence; Time measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International
Conference_Location
Washington, DC
Print_ISBN
0-7803-9268-X
Type
conf
DOI
10.1109/IEDM.2005.1609541
Filename
1609541
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