Title :
Program and SILC constraints on NC memories scaling: a monte carlo approach
Author :
Gusmeroli, R. ; Spinelli, A.S. ; Compagnoni, C. Monzio ; Ielmini, D. ; Morelli, F. ; Lacaita, A.L.
Author_Institution :
Dipt. di Elettronica e Informazione, Politecnico di Milano
Abstract :
We performed 3D Monte Carlo simulations of SOI NAND nanocrystal memories investigating the scaling constraints due to both program failure and reliability concerns. We show that the NC density should be optimized as a trade-off between number fluctuation and SILC immunity and that proper optimization is needed in order to meet the 45 nm ITRS node requirements
Keywords :
Monte Carlo methods; leakage currents; nanoelectronics; semiconductor storage; silicon-on-insulator; 3D Monte Carlo simulations; 45 nm; NC density; NC memories; SILC constraints; SILC immunity; SOI NAND nanocrystal memories; program failure; stress-induced leakage current; Electrons; Fluctuations; Leakage current; Memory management; Monte Carlo methods; Nanocrystals; Nonvolatile memory; Quantization; Robustness; Scalability;
Conference_Titel :
Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-9268-X
DOI :
10.1109/IEDM.2005.1609542
