Abstract :
Presents the table of contents of the proceedings.
Keywords :
Breakdown voltage; Copper; Degradation; High K dielectric materials; High-K gate dielectrics; MOSFETs; Niobium compounds; Nonvolatile memory; Stress; Titanium compounds;
Conference_Titel :
Integrated Reliability Workshop Final Report, 2005 IEEE International
Conference_Location :
S. Lake Tahoe, CA
Print_ISBN :
0-7803-8992-1
DOI :
10.1109/IRWS.2005.1609547
