Title :
Single-hole detrapping events in pMOSFETs NBTI degradation
Author :
Huard, Vincent ; Parthasarathy, C.R. ; Denais, M.
Author_Institution :
Philips Semicond., Crolles, France
Abstract :
This work shows that the recovery of NBTI degradation in ultra-small gate area pMOSFETs presents abrupt steps which are related to the detrapping of one hole. These results can be obtained by using a new approach to monitor the recovery, which is extremely more sensitive than previously proposed methodology. This result opens the way to model the NBTI degradation for ultra-small gate area devices which are main components of SRAM cells.
Keywords :
MOSFET; hole traps; semiconductor device models; NBTI degradation; SRAM cells; hole trapping; negative temperature bias instability; pMOSFET; single hole emission; single-hole detrapping events; Degradation; Diffusion bonding; MOSFETs; Monitoring; Negative bias temperature instability; Niobium compounds; Random access memory; Stress; Threshold voltage; Titanium compounds; NBTI; hole trapping; modeling; single hole emission;
Conference_Titel :
Integrated Reliability Workshop Final Report, 2005 IEEE International
Print_ISBN :
0-7803-8992-1
DOI :
10.1109/IRWS.2005.1609552
