• DocumentCode
    3446690
  • Title

    Combined effect of NBTI and channel hot carrier effects in pMOSFETs

  • Author

    Guerin, C. ; Huard, V. ; Bravaix, A. ; Denais, M. ; Roux, J.-M. ; Perrier, F. ; Baks, W.

  • Author_Institution
    STMicroelectronics, Crolles, France
  • fYear
    2005
  • fDate
    17-20 Oct. 2005
  • Abstract
    This work shows that the channel hot carrier (CHC) degradation for a p-MOSFET consists of two different regimes. At low Vg, the degradation is dominated by hot electrons produced by impact ionization. The hot electrons are responsible for the creation of both interface traps and electron traps within the oxide. At high Vg, a NBT-induced hot carrier effect is evidenced as well as an anomalous CHC effect. This work should help understanding the CHC degradation of pMOSFET as well as determining the worst case degradation.
  • Keywords
    MOSFET; electron traps; hot carriers; impact ionisation; interface states; semiconductor device reliability; NBTI effect; channel hot carrier effect; electron traps; hot electrons; impact ionization; interface traps; negative temperature bias instability; pMOSFET; Degradation; Electron traps; Hot carrier effects; Hot carriers; MOSFETs; Niobium compounds; Stress; Temperature; Titanium compounds; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Integrated Reliability Workshop Final Report, 2005 IEEE International
  • Print_ISBN
    0-7803-8992-1
  • Type

    conf

  • DOI
    10.1109/IRWS.2005.1609553
  • Filename
    1609553
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3446690