Title :
NBTI in SOI p-channel MOS field effect transistors
Author :
Liu, S.T. ; Ioannou, D.E. ; Ioannou, D.P. ; Flanery, M. ; Hughes, H.L.
Author_Institution :
Honeywell Defense & Space Electron. Syst., Plymouth, MN, USA
Abstract :
In this paper we describe NBTI tests and report results for partially depleted (PD) SOI MOSFETs selected from 0.35 and 0.15 μm technologies for harsh environment (i.e., space, high temperature, etc.) applications. When studying "pure" NBTI degradation, we find that the results are similar to bulk technologies, and in good agreement with the standard reaction-diffusion (R-D) theory of NBTI. However, when both gate and drain are biased as in a hot carrier injection (HCI) degradation situation, an interesting interaction of HCI and NBTI is observed, which leads to the resolution of the question of worst case HCI stress conditions for p-channel SOI MOSFETs with thin gate oxides.
Keywords :
MOSFET; hot carriers; reaction-diffusion systems; semiconductor device reliability; semiconductor device testing; silicon-on-insulator; 0.15 micron; 0.35 micron; HCI stress conditions; NBTI degradation; SOI p-channel MOS field effect transistors; hot carrier injection degradation; negative temperature bias instability; partially depleted SOI MOSFET; reaction-diffusion theory; thin gate oxides; Degradation; FETs; Hot carrier injection; Human computer interaction; MOSFETs; Niobium compounds; Space technology; Temperature; Testing; Titanium compounds;
Conference_Titel :
Integrated Reliability Workshop Final Report, 2005 IEEE International
Print_ISBN :
0-7803-8992-1
DOI :
10.1109/IRWS.2005.1609554
