Title :
Via-depletion electromigration in copper interconnects
Author :
Christiansen, Cathryn ; Li, Baozhen ; Gill, Jason ; Filippi, Ronald ; Angyal, Matthew
Author_Institution :
IBM Syst. & Technol. Group, Essex Junction, VT, USA
Abstract :
Via-depletion EM was studied under a number of conditions in a 65-nm technology. Observed failure distributions were either single mode or bimodal, depending on the structural configuration. The distribution and time to fail for the early-fail mode of the bimodal distributions varied with line width, via redundancy, and via current density. Additionally, it was observed that for bimodal failure distributions the length of the extension of the line past the via determined the fraction of early fails in the via. The bimodal behavior was suppressed by optimization of the via liner deposition process.
Keywords :
copper; current density; electromigration; failure analysis; integrated circuit interconnections; integrated circuit reliability; 65 nm; bimodal failure distributions; copper interconnects; early-fail mode; line width; structural configuration; via current density; via liner deposition process; via redundancy; via-depletion electromigration; Copper; Current density; Electromigration; Electrons; Geometry; Integrated circuit interconnections; Stress; Voltage; Wire; Wiring;
Conference_Titel :
Integrated Reliability Workshop Final Report, 2005 IEEE International
Print_ISBN :
0-7803-8992-1
DOI :
10.1109/IRWS.2005.1609555
