Via-depletion electromigration in copper interconnects

Author

Christiansen, Cathryn ; Li, Baozhen ; Gill, Jason ; Filippi, Ronald ; Angyal, Matthew

Author_Institution

IBM Syst. & Technol. Group, Essex Junction, VT, USA

fYear

2005

fDate

17-20 Oct. 2005

Abstract

Via-depletion EM was studied under a number of conditions in a 65-nm technology. Observed failure distributions were either single mode or bimodal, depending on the structural configuration. The distribution and time to fail for the early-fail mode of the bimodal distributions varied with line width, via redundancy, and via current density. Additionally, it was observed that for bimodal failure distributions the length of the extension of the line past the via determined the fraction of early fails in the via. The bimodal behavior was suppressed by optimization of the via liner deposition process.

Keywords

copper; current density; electromigration; failure analysis; integrated circuit interconnections; integrated circuit reliability; 65 nm; bimodal failure distributions; copper interconnects; early-fail mode; line width; structural configuration; via current density; via liner deposition process; via redundancy; via-depletion electromigration; Copper; Current density; Electromigration; Electrons; Geometry; Integrated circuit interconnections; Stress; Voltage; Wire; Wiring;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Reliability Workshop Final Report, 2005 IEEE International

Print_ISBN

0-7803-8992-1

Type

conf

DOI

10.1109/IRWS.2005.1609555

Filename

1609555