DocumentCode
3446822
Title
Silicon-Based, Tunable-Barrier Single Charge Sources
Author
Zimmerman, Neil M. ; Fujiwara, Akira ; Martin, Stuart ; Ono, Yukinori ; Takahashi, Yasuo
Author_Institution
National Inst. of Stand. & Technol., Gaithersburg, MD
fYear
2004
fDate
38139
Firstpage
302
Lastpage
303
Abstract
We have demonstrated the operation of, and are assessing theoretically and experimentally the error rates of, silicon-based single-electron turnstiles, pumps, and CCDs. These devices are conceptually very similar to the metal-based pumps which have already proven to have a very low error rate; potentially, the Si-based devices have several substantial advantages, including higher current value, higher temperature of operation, and simpler operation
Keywords
charge-coupled devices; errors; pumps; quantum theory; semiconductor device measurement; semiconductor device models; silicon; single electron devices; CCD; error rates; pumps; silicon; single-electron turnstiles; tunable-barrier single charge sources; Capacitance; Electrons; Error analysis; Frequency; Laboratories; MOSFET circuits; Metrology; NIST; Temperature; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Precision Electromagnetic Measurements Digest, 2004 Conference on
Conference_Location
London
Print_ISBN
0-7803-8494-6
Electronic_ISBN
0-7803-8494-6
Type
conf
DOI
10.1109/CPEM.2004.305585
Filename
4097240
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