Lifetime prediction of ultra-thin gate oxide PMOSFETs submitted to hot hole injections

In this paper, we show that the effect of hot hole injections in ultra-thin oxide P-MOSFETs, is merged into the hole tunneling through the gate oxide. Thus, extrapolated lifetime techniques have to take into account both mechanisms. Even if quantitative distinction is difficult, we propose a first attempt to distinguish both contributions. This modelling allows to separate both mechanism consequences in relation to the extension of drain space charge region ΔL.