DocumentCode :
3446893
Title :
Optimization of growth parameters for improved adhesion and electricity of molybdenum films deposited by RF magnetron sputtering
Author :
Kuo, Shou-Yi ; Jeng, Ming-Jer ; Chang, Liann-Be ; Lin, Wei-Ting ; Hu, Sung-Cheng ; Lu, Yung-Tien ; Wu, Ching-Wen
Author_Institution :
Dept. of Electron. Eng., Chang Gung Univ., Taoyuan, Taiwan
fYear :
2009
fDate :
7-12 June 2009
Abstract :
In this article, we report the fabrication and characterization of molybdenum (Mo) thin films on soda-lime glass substrate grown by reactive RF magnetron sputtering for Cu(In,Ga)Se2 thin film solar cells. It was found that the growth parameters, such as argon flow rate, RF power, bi-layer of Mo thin films and substrate temperature, have significant influences on properties of Mo films. As the argon flow rate was increased, the sheet resistance of Mo films increase, and the strain were changed from tensile to compressive. Higher RF power leads to a decrease on sheet resistance, and the optimal thickness and sheet resistance are 1 ¿m and 0.2 ¿/¿. In addition, our experimental results proved that the increase of substrate temperature will lead to better adhesion of Mo thin film with glass substrate, and lower sheet resistance (0.11~0.14 ¿/¿).
Keywords :
adhesion; compressive strength; copper compounds; molybdenum; semiconductor thin films; solar cells; sputter deposition; tensile strength; Mo; RF power; adhesion; argon flow rate; compressive strain; electricity; growth parameter optimization; molybdenum thin films; reactive RF magnetron sputtering; sheet resistance; soda-lime glass substrate; substrate temperature; tensile strain; thin film solar cells; Adhesives; Argon; Fabrication; Glass; Photovoltaic cells; Radio frequency; Sputtering; Substrates; Temperature; Tensile strain;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE
Conference_Location :
Philadelphia, PA
ISSN :
0160-8371
Print_ISBN :
978-1-4244-2949-3
Electronic_ISBN :
0160-8371
Type :
conf
DOI :
10.1109/PVSC.2009.5411612
Filename :
5411612
Link To Document :
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