DocumentCode
3446902
Title
Temperature constant BT tests of parasitic MOSFETs
Author
Katto, Hisao
Author_Institution
Suwa Coll., Sci. Univ. of Tokyo, Japan
fYear
1996
fDate
20-23 Oct 1996
Firstpage
87
Lastpage
93
Abstract
A new technique is proposed for Bias-Temperature (BT) stress tests of parasitic MOSFETs: the temperature is kept constant during the BT stress and Vt measurement steps. Application of a positive substrate bias, Vb, makes the threshold voltage, Vt, smaller than the stress bias, so that Vt remains stable during the measurement. The method is applied to evaluate A1-2 NMOSFETs with pTEOS adopted as an intermetallic oxide. Both positive and negative instabilities are found depending on the planarization process
Keywords
MOSFET; semiconductor device reliability; semiconductor device testing; stability; 100 to 175 C; 15 to 200 V; NMOSFETs; bias-temperature stress tests; negative instabilities; pTEOS intermetallic oxide; parasitic MOSFETs; positive instabilities; positive substrate bias; temperature constant BT tests; threshold voltage; Inorganic materials; Intermetallic; MOSFETs; Organic materials; Plasma temperature; Pollution measurement; Qualifications; Stress measurement; Testing; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Integrated Reliability Workshop, 1996., IEEE International
Conference_Location
Lake Tahoe, CA
Print_ISBN
0-7803-3598-8
Type
conf
DOI
10.1109/IRWS.1996.583390
Filename
583390
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