DocumentCode :
3446962
Title :
Dependence of of thickness F-doped SnO2 films grown by spray pyrolysis technique
Author :
Oshima, Minoru ; Takemoto, Yujin ; Yoshino, Kenji
Author_Institution :
Dept. of Electr. & Electr. Eng., Univ. of Miyazaki, Miyazaki, Japan
fYear :
2009
fDate :
7-12 June 2009
Abstract :
Transparent conducting thin films of fluorine-doped SnO2 were deposited on glass substrates by spray pyrolysis technique in order to find out the effect of film thickness. These films were prepared using fluorine concentrations of 4 mol% at substrate temperature of 500°C. Their electrical resistivity decreased although optical transmittance decreased with increasing the film thickness.
Keywords :
electrical resistivity; fluorine; glass; pyrolysis; semiconductor thin films; substrates; tin compounds; wide band gap semiconductors; SnO2:F; electrical resistivity; fluorine concentrations; glass substrates; optical transmittance; spray pyrolysis; temperature 500 degC; thickness dependence; thin film growth; transparent conducting thin films; Conductivity; Glass; Numerical analysis; Optical films; Scanning electron microscopy; Semiconductor films; Spraying; Sputtering; Substrates; X-ray scattering;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE
Conference_Location :
Philadelphia, PA
ISSN :
0160-8371
Print_ISBN :
978-1-4244-2949-3
Electronic_ISBN :
0160-8371
Type :
conf
DOI :
10.1109/PVSC.2009.5411615
Filename :
5411615
Link To Document :
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