DocumentCode :
3446998
Title :
Interfacial properties of the K-doped C60: CuPc heterojunctions
Author :
Chiu-Ping Cheng ; Chen, Wen-Yen ; Wei, Ching-Hsuan ; Pi, Tun-Wen
Author_Institution :
Dept. of Appl. Phys., Nat. Chiayi Univ., Chiayi, Taiwan
fYear :
2009
fDate :
7-12 June 2009
Abstract :
We report on the interfacial properties of the K-doped C60: copper phthalocyanine (CuPc) heterojunctions, studied via synchrotron-radiation photoemission. The K-doped heterointerfaces were obtained by means of C60 on K1.5CuPc and CuPc on K3C60. The valence-band and K 3p core-level spectra show that the K diffuses and transfers negative charge into C60 overlayer at the C60/K1.5CuPc interface, while only physisorption could be found at the CuPc/K3C60 interface. A significant shift of the vacuum level is observed in both cases, caused by the charge transfer for the C60/K1.5CuPc, while by the pillow effect for the CuPc/K3C60. The creation of gap states and an increased separation between the lowest unoccupied molecular orbital of C60 and the highest occupied molecular orbital of CuPc at the C60/K1.5CuPc interface reveal that the K-doped film could improve the photovoltaic effect. However, the advantage has not been found at the CuPc/K3C60 interface.
Keywords :
adsorption; charge exchange; chemical interdiffusion; core levels; fullerenes; interface states; organic semiconductors; photovoltaic effects; potassium; semiconductor-insulator boundaries; valence bands; K 3p core-level spectra; K-doped heterointerfaces; charge transfer; copper phthalocyanine heterojunctions; highest occupied molecular orbital; interfacial properties; lowest unoccupied molecular orbital; photovoltaic effect; physisorption; synchrotron-radiation photoemission; valence band; Copper; Gratings; Heterojunctions; Organic semiconductors; Photoelectricity; Photovoltaic cells; Physics; Semiconductor device doping; Surface cleaning; Synchrotron radiation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE
Conference_Location :
Philadelphia, PA
ISSN :
0160-8371
Print_ISBN :
978-1-4244-2949-3
Electronic_ISBN :
0160-8371
Type :
conf
DOI :
10.1109/PVSC.2009.5411618
Filename :
5411618
Link To Document :
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