Title :
High-speed epitaxial base transistors on bonded SOI
Author :
Kojima, M. ; Fukuroda, A. ; Fukano, T. ; Higaki, N. ; Yamazaki, T. ; Sugii, T. ; Arimoto, Y. ; Ito, T.
Author_Institution :
Fujitsu Lab. Ltd., Atsugi, Japan
Abstract :
The authors propose fully isolated high-speed bipolar transistors using a photoepitaxial base and wafer-bonded SOI (silicon-on-insulator). A 0.7-μm-thick buried layer that was highly doped by ion implantation before bonding was formed. Epitaxial base transistors (EBTs) on 1-μm-thick bonded SOI were fabricated. The devices had a cutoff frequency of 32 GHz
Keywords :
bipolar integrated circuits; bipolar transistors; integrated circuit technology; ion implantation; semiconductor-insulator boundaries; 32 GHz; bonded SOI; buried layer; epitaxial base transistors; fully isolated; high-speed bipolar transistors; ion implantation; photoepitaxial base; wafer-bonded; Bipolar transistors; Circuits; Etching; Indium tin oxide; Laboratories; Parasitic capacitance; Semiconductor films; Silicon on insulator technology; Wafer bonding; Wiring;
Conference_Titel :
Bipolar Circuits and Technology Meeting, 1991., Proceedings of the 1991
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-0103-X
DOI :
10.1109/BIPOL.1991.160957
