Photovoltaic characterization of Cu(InGa)Se2 and Cu(InAl)Se2 solar cells by photoassisted Kelvin probe force microscopy

Author

Takihara, M. ; Minemoto, Takashi ; Wakisaka, Y. ; Yamada, S. ; Takahashi, T.

Author_Institution

Inst. of Ind. Sci., Univ. of Tokyo, Tokyo, Japan

fYear

2009

fDate

7-12 June 2009

Abstract

We observed photovoltage as well as potential distribution around grain boundaries (GBs) in thin film solar cells based on Cu(InGa)Se₂ (CIGS) and Cu(InAl) Se₂ (CIAS) materials by the photoassisted Kelvin probe force microscopy (P-KFM) method we have originally proposed. As a result, the abrupt drop of the potential and the enhancement of photovoltage around the GBs was observed on both CIGS and CIAS materials. We also found that the typical value of the photovoltage on the CIAS solar cell was apparently higher than that on the CIGS cell.

Keywords

aluminium compounds; atomic force microscopy; copper compounds; gallium compounds; grain boundaries; indium compounds; semiconductor thin films; solar cells; ternary semiconductors; CIAS materials; CIGS materials; CuInAlSe₂; CuInGaSe₂; grain boundaries; photoassisted Kelvin probe force microscopy; photovoltage; photovoltaic characterization; thin film solar cells; Artificial intelligence; Atomic force microscopy; Kelvin; Optical surface waves; Photonic band gap; Photovoltaic cells; Photovoltaic systems; Probes; Solar power generation; Zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE

Conference_Location

Philadelphia, PA

ISSN

0160-8371

Print_ISBN

978-1-4244-2949-3

Electronic_ISBN

0160-8371

Type

conf

DOI

10.1109/PVSC.2009.5411620

Filename

5411620